|
Λεπτομέρειες:
Πληρωμής & Αποστολής Όροι:
|
Size: | 6inch | Type: | 4H-SEMI |
---|---|---|---|
Thickness a (Tropel): | 500.0 µm ±25.0 µm | Refractive index a: | >2.6 @550nm |
Haze a: | ≤0.3% | Microtube density: | ≤0.5/cm² |
Notch orientation: | <1-100>±2° | ||
Επισημαίνω: | 6inch SiC substrate for AR glasses,4H-SEMI SiC substrate for 5G,SiC substrate with warranty |
6inch 4H-SEMI Type SiC Substrate for AR Glasses
The 6-inch 4H-SEMI silicon carbide (4H-SiC) substrate is a wide-bandgap semiconductor material based on the hexagonal crystal structure (4H polytype), engineered for semi-insulating properties (resistivity ≥1×10⁷ Ω·cm). Fabricated via physical vapor transport (PVT) or liquid-phase epitaxy (LPE), it delivers 3.26 eV wide bandgap, 3.5 MV/cm breakdown field, 4.9 W/cm·K thermal conductivity, and high-frequency low-loss characteristics, making it ideal for extreme-environment applications such as 5G communications, RF devices, and aerospace electronics. Compared to silicon-based materials, it offers 10× higher breakdown field strength and 3× superior thermal conductivity, enabling stable operation across -200°C to 1,600°C, and serving as an optimal substrate for high-voltage, high-frequency, and high-power devices.
1. Electrical Performance
Wide Bandgap (3.26 eV): 6 inch 4H-SEMI SiC substrate withstands voltages exceeding 10 kV, suitable for high-voltage scenarios like smart grids and EV inverters.
High Breakdown Field (3.5 MV/cm): 10× higher than silicon, minimizing leakage current and enhancing reliability.
High Electron Mobility (900 cm²/V·s): 6 inch 4H-SEMI SiC substrate optimizes switching speed in RF devices, reducing conduction losses.
2. Thermal & Mechanical Properties
High Thermal Conductivity (4.9 W/cm·K): 3× better heat dissipation than silicon, supporting extreme temperatures (-200°C to 1,600°C).
High Hardness (Mohs 9.2): 6 inch 4H-SEMI SiC substrate resists wear, compatible with precision processes like CMP and dry etching.
3. Process Compatibility
Low Micropipe Density (<1 cm⁻²): 6 inch 4H-SEMI SiC substrate minimizes lattice defects for superior epitaxial layer quality.
Surface Flatness (Ra <0.2 nm): 6 inch 4H-SEMI SiC substrate ensures compatibility with lithography and thin-film deposition.
1. 5G Communications & RF Devices
2. Electric Vehicles (EVs)
3. Aerospace & Defense
4. Industrial & Energy Systems
Crystal parameters | |
Type | 4H |
Refractive index a | >2.6 @550nm |
Absorptivity a | ≤0.5% @450-650nm |
MP transmittance a (without anti-reflection conditions) |
≥66.5% |
Haze a | ≤0.3% |
Polymorphism a | None permitted |
Microtube density | ≤0.5/cm² |
Hexagonal void density | None permitted |
Impurity Grain on Hexagonal a | None permitted |
MP Inclusion a | None permitted |
Mechanical parameters | |
Dia(inches) | 6 |
Surface orientation | (0001)±0.3° |
Notch reference edge | Notch |
Notch orientation | <1-100>±2° |
Notch angle | 90±5°/1° |
Notch depth | 1 mm ±0.25 mm (-0 mm) |
Surface treatment | C-Si side (CMP) |
Wafer edge | Bevel |
Surface roughness (AFM) | Ra≤0.2 nm (5×5 µm scan area) |
Thickness a (Tropel) | 500.0 µm ±25.0 µm |
LTV (Tropel) | ≤2 µm |
TTV a (Tropel) | ≤3 µm |
Bow a (Tropel) | ≤5 µm |
Warp a (Tropel) | <15 µm |
Q1: What is the key difference between N-type and semi-insulating 4H-SiC substrates?
A1:N-type substrates (doped with nitrogen) are used for power devices (e.g., MOSFETs, diodes) requiring high electron mobility, while semi-insulating substrates (high resistivity) are ideal for RF devices (e.g., GaN-on-SiC) to minimize parasitic capacitance.
Q2: What are the key technical challenges in manufacturing 6-inch 4H-SEMI SiC substrates?
A2: Main challenges include reducing micropipe density to <0.5 cm⁻², controlling dislocation defects, and improving resistivity uniformity while lowering production costs to accelerate mass adoption in power electronics.
Tag: #Silicon carbide substrate, #6inch, #Semiconductor materials, #4H-SEMI SiC, #Product Grade, #5G Communications, # AR Glasses, #MOS Grade, #4H-SiC Substrates
Υπεύθυνος Επικοινωνίας: Mr. Wang
Τηλ.:: +8615801942596