4H Silicon Carbide Substrate for Power Electronics, RF Devices UV Optoelectronics

Άλλα βίντεο
November 20, 2025
Σύνδεση Κατηγορίας: Υπόστρωμα SIC
Σύνοψη: In this video, we explore the 4H Silicon Carbide Substrate, showcasing its high-purity single-crystal structure and ultra-low defect density. Watch as we highlight its applications in power electronics, RF devices, and UV optoelectronics, along with its precision CMP polishing and thermal performance.
Σχετικά χαρακτηριστικά προϊόντων:
  • High-purity 4H-SiC single-crystal material with ultra-low defect density.
  • Precision CMP polishing for epitaxy-ready surfaces with Ra ≤ 0.5 nm.
  • Excellent thermal conductivity (490 W/m*K) and high-temperature capability (up to 600 °C).
  • Stable electrical properties with resistivity of 0.01-0.1 Ω*cm.
  • High mechanical strength with Vickers hardness of 28-32 GPa.
  • Ideal for power electronics, RF devices, and UV optoelectronics.
  • Available in customizable sizes, thicknesses, and doping levels.
  • Suitable for R&D, prototyping, and small-scale production.
FAQS:
  • What is the main advantage of 4H-SiC compared with 6H-SiC?
    4H-SiC offers higher electron mobility, lower on-resistance, and superior performance in high-power and high-frequency devices, making it the preferred material for MOSFETs and diodes.
  • Do you provide conductive or semi-insulating SiC substrates?
    Yes, we offer N-type conductive 4H-SiC for power electronics and semi-insulating 4H-SiC for RF, microwave, and UV detector applications, with customizable doping levels.
  • Can the substrate be used directly for epitaxy?
    Yes, our epi-ready 4H-SiC substrates feature CMP-polished Si-face surfaces with low defect density, suitable for MOCVD, CVD, and HVPE epitaxial growth of GaN, AlN, and SiC layers.
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